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" Complementary Metal Oxide Semiconductor Compatible Silicon-on-Insulator Optical Rib Waveguides with Local Oxidation of Silicon IsolationET C A L I B ~ &RIQUEMENTET C A L I B ~&RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES "


Document Type : Latin Dissertation
Language of Document : English
Record Number : 154915
Doc. No : ET26707
Main Entry : Lynda Rowe, B.Eng. Carleton University
Title Proper : Complementary Metal Oxide Semiconductor Compatible Silicon-on-Insulator Optical Rib Waveguides with Local Oxidation of Silicon IsolationET C A L I B ~ RIQUEMENTET C A L I B ~RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : The Local Oxidation of Silicon (LOCOS) technique is used for the first time to defineoptical rib waveguides in silicon-on-insulator (SOI) material. Optical mode simulationwas used to determine rib geometries suitable for single-mode propagation in the 1550nm optical telecommunications band. Test devices were then fabricated in SO1 materialwith a Si film thickness near 3 pm. Cut-and-etchback optical testing of 3 pm drawn.
Subject : Electericl tess
: برق
electronic file name : TL50981.pdf
Title and statement of responsibility and : Complementary Metal Oxide Semiconductor Compatible Silicon-on-Insulator Optical Rib Waveguides with Local Oxidation of Silicon IsolationET C A L I B ~ RIQUEMENTET C A L I B ~RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES [Thesis]
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TL50981.pdf
TL50981.pdf
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