Thermal Analysis of AlGaNJGaN HEMT monolithic integration with CMOS on Silicon Ill SubstratesET C A L I B ~ &RIQUEMENTET C A L I B ~&RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES

منو

" Thermal Analysis of AlGaNJGaN HEMT monolithic integration with CMOS on Silicon Ill SubstratesET C A L I B ~ &RIQUEMENTET C A L I B ~&RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	154908
Doc. No	:	ET26700
Main Entry	:	Pietro Natale Alessandro Chyurlia, B .Eng.
Title Proper	:	Thermal Analysis of AlGaNJGaN HEMT monolithic integration with CMOS on Silicon Ill SubstratesET C A L I B ~ RIQUEMENTET C A L I B ~RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	A thermal analysis of the potential monolithic integration of AlGaWGaN HEMTswith CMOS in silicon substrates is performed. ATAR, an in-house 3-D thermal modelingtool, is used to perform a thermal analysis on a 300 pm wide GaN transistor in two.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL50974.pdf
Title and statement of responsibility and	:	Thermal Analysis of AlGaNJGaN HEMT monolithic integration with CMOS on Silicon Ill SubstratesET C A L I B ~ RIQUEMENTET C A L I B ~RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES [Thesis]