Photoluminescence and Optical Anisotropy of GaAsIAlGaAs Quant urn Dots for Optoelectronic Device ApplicationsPOMPES PAR TRANSITIONS MULTIPLES

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" Photoluminescence and Optical Anisotropy of GaAsIAlGaAs Quant urn Dots for Optoelectronic Device ApplicationsPOMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	153052
Doc. No	:	ET24844
Main Entry	:	I-Chung Miles Sun
Title Proper	:	Photoluminescence and Optical Anisotropy of GaAsIAlGaAs Quant urn Dots for Optoelectronic Device ApplicationsPOMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Semiconductor lasers using quantum dots as active media have recently attractedgreat attention owing to their theoretically predicted superior performance over quan-tum well structures. Polarization properties of the diode lasers are of great.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL49055.pdf
Title and statement of responsibility and	:	Photoluminescence and Optical Anisotropy of GaAsIAlGaAs Quant urn Dots for Optoelectronic Device ApplicationsPOMPES PAR TRANSITIONS MULTIPLES [Thesis]