A THEORY OF OCCUPATION STATISTICS FOR DISORDERED SEMICONDUCTORS WITH APPLICATIONSPOMPES PAR TRANSITIONS MULTIPLES

منو

" A THEORY OF OCCUPATION STATISTICS FOR DISORDERED SEMICONDUCTORS WITH APPLICATIONSPOMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	152415
Doc. No	:	ET24207
Main Entry	:	Thanh H. Nguyen
Title Proper	:	A THEORY OF OCCUPATION STATISTICS FOR DISORDERED SEMICONDUCTORS WITH APPLICATIONSPOMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	An elementary empirical model for the distribution of electronic states is em-ployed to develop a quantitative theory of equilibrium occupation statistics for dis-ordered semiconductors. In particular, assuming Fermi-Dirac occupation statisticsand charge neutrality, the dependence of the Fenni level position on temperature,the dopant concentration level, and disorder, as represented by the breadth of thetails in the conduction band and valence band distributions of electronic states, isinvestigated. The corresponding electron concentrations are determined, and in-sights into these results are presented. The implications of this analysis, in termsof the screening length and the relationship between the diffusion coefficient andthe mobility, are explored. Finally, the application of this theory to the specificcase of hydrogenated amorphous silicon is considered..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL48409.pdf
Title and statement of responsibility and	:	A THEORY OF OCCUPATION STATISTICS FOR DISORDERED SEMICONDUCTORS WITH APPLICATIONSPOMPES PAR TRANSITIONS MULTIPLES [Thesis]