Oxpitride Gate Dielectrics for Deep Sub-micron MOS DevicesPOMPES PAR TRANSITIONS MULTIPLES

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" Oxpitride Gate Dielectrics for Deep Sub-micron MOS DevicesPOMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	152399
Doc. No	:	ET24191
Main Entry	:	Antoine Khoueir
Title Proper	:	Oxpitride Gate Dielectrics for Deep Sub-micron MOS DevicesPOMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The continuous demand for improved CMOS transistors necessitate smallerdevice dimensions. The reduction in chip size into the deep sub-micron dimensions opensup new scientific and engineering challenges. One of the most critical material in.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL48393.pdf
Title and statement of responsibility and	:	Oxpitride Gate Dielectrics for Deep Sub-micron MOS DevicesPOMPES PAR TRANSITIONS MULTIPLES [Thesis]