10-nni CMOS - A Design Study on Tecliiiologj- Requirenient with Pon-er/Perforinaiice Assessinent

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" 10-nni CMOS - A Design Study on Tecliiiologj- Requirenient with Pon-er/Perforinaiice Assessinent "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	152229
Doc. No	:	ET24021
Main Entry	:	1Iinjiaii Liu
Title Proper	:	10-nni CMOS - A Design Study on Tecliiiologj- Requirenient with Pon-er/Perforinaiice Assessinent
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Tlie scaling of ClIOS technology lias progressed rapidly for three decades, con-tributing to the superior performance and dramatically reduced cost per functionfor niodern integrated circuits. As tlie CMOS diniension, i11 particular, the chan-nel length approaches the nanonieter regime (< 100nni)). lion-ever, static powerdissipation increases precipitously due to increasing leakage currents arising fromquantuni niechanical tunneliiig and electron thermal energy. To extend ClIOSscaling to 10 11m while still gaining significant performance benefit. alternativedevice structures or materials are being studied extensis-ely. This work coiisiderstlie device design and teclino1og~- requirements of scaling bulk lIOSFET to.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL48174.pdf
Title and statement of responsibility and	:	10-nni CMOS - A Design Study on Tecliiiologj- Requirenient with Pon-er/Perforinaiice Assessinent [Thesis]