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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151794
Doc. No : ET23586
Main Entry : Nancy Lynn Nix
Title Proper : THE USE OF SILICON-GERMANIUM TRANSISTORS IN MICROSTRIP VOLTAGE CONTROLLED OSCILLATOR DESIGN
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Current X-band (8-12GHz) oscillators are designed around bipolar discrete silicontransistors. These transistors have currently become obsolete. Suppliers have ceasedmaking the high frequency transistor in favor of a lower frequency transistor in order toobtain the more lucrative cell phone market. New suppliers or new designs are needed tocontinue production of X-band oscillators. Alternatively, GaAs FET devices are suitablefor microwave and millimeter oscillator designs but have inferior phase noiseperformance compared to silicon bipolars and are not considered a substitute. It isthought that a new transistor, the silicon germanium (SiGe) transistor, which was justmade available in recent years, can be used. Conventional silicon-only transistors canhandle frequencies from 10-20GHz, while the SiGe transistor can handle up to 5OGHz.During the course of this thesis, a X-band VCO (Voltage Controlled Oscillators)will be designed around this new SiGe Transistor. Existing results for conventional plainsilicon VCOs will be compared to test results obtained with the new SiGe transistor. The........-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL46829.pdf
Title and statement of responsibility and : THE USE OF SILICON-GERMANIUM TRANSISTORS IN MICROSTRIP VOLTAGE CONTROLLED OSCILLATOR DESIGN [Thesis]
 
 
 
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