Aluminum Gallium Nitride tntravioiet Photodetectors: Device Design, Fabrication and Characterization

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" Aluminum Gallium Nitride tntravioiet Photodetectors: Device Design, Fabrication and Characterization "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151478
Doc. No	:	ET23270
Main Entry	:	Danielle M. Walker
Title Proper	:	Aluminum Gallium Nitride tntravioiet Photodetectors: Device Design, Fabrication and Characterization
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Solar-blind ultraviolet 0 photodetectors are critical components in manycivilian and military applications such as W astronomy, flame sensors, pollutionmonitoring, and early missile warning systems. Current Si-based devices, which arein widespread use, suffer from low efficiencies, short lifetimes and high noise levelsdue to the incompatibility of the material properties with the applications.Al,Gal-,N-based....-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46507.pdf
Title and statement of responsibility and	:	Aluminum Gallium Nitride tntravioiet Photodetectors: Device Design, Fabrication and Characterization [Thesis]