Processing and Characterization of L m 0 3 Thin Films for Ferroelectric Nonvolatile Memory Applications

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" Processing and Characterization of L m 0 3 Thin Films for Ferroelectric Nonvolatile Memory Applications "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151323
Doc. No	:	ET23115
Main Entry	:	Jie Zhu
Title Proper	:	Processing and Characterization of L m 0 3 Thin Films for Ferroelectric Nonvolatile Memory Applications
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Both highly c-axis and randomly-oriented L W 3 thin films are grown on p-type Si(1 11) substrates by RF magnetron sputtering and metallo-organic decomposition (MOD),respectively. Ellipsometry, X-ray difiction, AFM and SEM are used to analyze thestructural quality of the deposited fermelectric thin films, including thickness, crystallinity,stoichiometry and surface roughness. Metal-ferroelectric-semiconductor structures arefabricated and electrically characterized with polarization vs. electric field (P-E) andcapacitance vs. voltage (C-V) measurements. Hysteresis cwes based on polarizationswitching are observed, verifjmg the ferroeleceicity of deposited LiNbO, thin films.Comparison of different film growth mechanisms between these two deposition methods ismade, and their effects on physical and electrical characteristics of the derived LiNbO3 thinfilms are discussed. RF magnetron sputtering is proved to be a more promising thin-filmgrowth technique than MOD for femoelectric nonvolatile memory applications..-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46349.pdf
Title and statement of responsibility and	:	Processing and Characterization of L m 0 3 Thin Films for Ferroelectric Nonvolatile Memory Applications [Thesis]