ELECTRICAL CHARACTERIZATION OF PLASMA ENHANCED CVD SILICON NITRIDE DIELECTRIC ON COPPER

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" ELECTRICAL CHARACTERIZATION OF PLASMA ENHANCED CVD SILICON NITRIDE DIELECTRIC ON COPPER "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151212
Doc. No	:	ET23004
Main Entry	:	Amudha lrudayarn
Title Proper	:	ELECTRICAL CHARACTERIZATION OF PLASMA ENHANCED CVD SILICON NITRIDE DIELECTRIC ON COPPER
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	In this work, a novel metal-insulator-metal (MIM) capacitor process is introduced andintegrated in a Copper Interconnect technology, whose smallest feature size is 0.18vm. process,which has good yield, reliability and repeatability. The MIM uses a one-photomask process andhence is termed as the Low-cost-integration (LCI) MIM. The LC1 MIM uses copper as the bottomelectrode, plasma enhanced silicon nitride as the dielectric, and Tantalum nitride as the topelectrode. The target capacitance density is 1.5f~lpm~. The target leakage current is 1e"~hn' at3.3V at 125 . The maximum operating voltages that the MIM is designed for is 5V. The voltagelinearity is desired to be less than 1OOppmiv-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46233.pdf
Title and statement of responsibility and	:	ELECTRICAL CHARACTERIZATION OF PLASMA ENHANCED CVD SILICON NITRIDE DIELECTRIC ON COPPER [Thesis]