MODELING OF GaN MOLECULAR BEAM EPITAXY GROWTH

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" MODELING OF GaN MOLECULAR BEAM EPITAXY GROWTH "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151080
Doc. No	:	ET22872
Main Entry	:	Wenning Fu
Title Proper	:	MODELING OF GaN MOLECULAR BEAM EPITAXY GROWTH
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	HI-V nitrides ( GaN, InN and A N ) are intensely researched for optoelectronicapplications spanning the entire visible spectrum. In spite of realization of commercialdevices and advances in processing of materials and devices, the understanding of theprocessing and epitaxial growth of these materials are incomplete. In this study, a rateequation approach is proposed based on physically sound surface processes to investigatethe molecular beam epitaxy growth of GaN using ammonia and ECR plasma source. Asurface riding layer of Ga and ammonia..,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46100.pdf
Title and statement of responsibility and	:	MODELING OF GaN MOLECULAR BEAM EPITAXY GROWTH [Thesis]