EPITAXIAL GROWTH OF SIC ON PATTERNED SUBSTRATES VIA

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" EPITAXIAL GROWTH OF SIC ON PATTERNED SUBSTRATES VIA "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	151018
Doc. No	:	ET22810
Main Entry	:	Galyna Melnychuk
Title Proper	:	EPITAXIAL GROWTH OF SIC ON PATTERNED SUBSTRATES VIA
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	In spite of significant progress in S i c epitaxial growth, the high density ofcrystallographic defects in substrates results in the growth of lower than desirablecrystalline quality epitaxial material. Both the reduction of lattice-mismatch-relateddefects in heteroepitaxy and hrther improvement of the crystalline quality of epitaxia:layers in homoepitaxy require new approaches to Sic epitaxial growth.Three different types of patterned substrates to grow epitaxial layers of improvedquality were studied in this work. Lateral epitaxial overgrowth (LEO) and Pendeoepitaxial growth were used to obtain heteroepitaxial 3C-Sic layers on commercial Siwafers. Porous Sic (PSC) substrates were implemented to grow 4H and 6H-SIChomoepitaxial films of superior quality than..,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL46036.pdf
Title and statement of responsibility and	:	EPITAXIAL GROWTH OF SIC ON PATTERNED SUBSTRATES VIA [Thesis]