TWO-DIMENSIONAL MONTE CARLO PARTICLE-BASED SIMULATIONS OF ULTRA-SMALL MOSFETS

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" TWO-DIMENSIONAL MONTE CARLO PARTICLE-BASED SIMULATIONS OF ULTRA-SMALL MOSFETS "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150875
Doc. No	:	ET22667
Main Entry	:	Xiao Jiang He
Title Proper	:	TWO-DIMENSIONAL MONTE CARLO PARTICLE-BASED SIMULATIONS OF ULTRA-SMALL MOSFETS
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	This thesis explains an Ensemble Monte Carlo code (EMC) and a two-dimensional Monte Carlo Poisson Solver (MCPS) that were developed as part of thisMaster's Thesis research. The EMC code was used for bulk silicon description, and theMCPS solver was used for modeling ultra-small n-channel metal-oxide-semiconductorfield-effect transistors (M0SFETs)- The commercially available Silvaco's devicesimulator was also used to model 2 p and 50 nm n-channel MOSFETs.Simulation results are presented for the time evolution of the electron driftvelocity and energy in bulk silicon materials for various electric fields. Ultra-smallMOSFETs were thoroughly studied using the MCPS. The simulation results for SO nmgate-length n-channel MOSFET device....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45893.pdf
Title and statement of responsibility and	:	TWO-DIMENSIONAL MONTE CARLO PARTICLE-BASED SIMULATIONS OF ULTRA-SMALL MOSFETS [Thesis]