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Document Type : Latin Dissertation
Language of Document : English
Record Number : 150732
Doc. No : ET22524
Main Entry : Brian C. Morgan
Title Proper : DEVELOPMENT OF A DEEP SILICON PHASE FRESNEL LENS USING GRAY-SCALE LITHOGRAPHY AND DEEP REACTIVE ION ETCHING
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : A phase Fresnel lens (PFL) could achieve higher sensitivity and angularresolution in astronomical observations than the current generation of gamma and hardx-ray instruments. For ground tests of a PFL system, silicon lenses must be fabricatedon the micro-scale with controlled profiles to enable high lens efficiency. Thus, twoMEMS-based technologies, gray-scale lithography and deep reactive ion etching....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL45746.pdf
Title and statement of responsibility and : DEVELOPMENT OF A DEEP SILICON PHASE FRESNEL LENS USING GRAY-SCALE LITHOGRAPHY AND DEEP REACTIVE ION ETCHING [Thesis]
 
 
 
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