DEVELOPMENT OF A DEEP SILICON PHASE FRESNEL LENS USING GRAY-SCALE LITHOGRAPHY AND DEEP REACTIVE ION ETCHING

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" DEVELOPMENT OF A DEEP SILICON PHASE FRESNEL LENS USING GRAY-SCALE LITHOGRAPHY AND DEEP REACTIVE ION ETCHING "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150732
Doc. No	:	ET22524
Main Entry	:	Brian C. Morgan
Title Proper	:	DEVELOPMENT OF A DEEP SILICON PHASE FRESNEL LENS USING GRAY-SCALE LITHOGRAPHY AND DEEP REACTIVE ION ETCHING
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	A phase Fresnel lens (PFL) could achieve higher sensitivity and angularresolution in astronomical observations than the current generation of gamma and hardx-ray instruments. For ground tests of a PFL system, silicon lenses must be fabricatedon the micro-scale with controlled profiles to enable high lens efficiency. Thus, twoMEMS-based technologies, gray-scale lithography and deep reactive ion etching....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45746.pdf
Title and statement of responsibility and	:	DEVELOPMENT OF A DEEP SILICON PHASE FRESNEL LENS USING GRAY-SCALE LITHOGRAPHY AND DEEP REACTIVE ION ETCHING [Thesis]