Electron and ion-beam characterization of nitride semiconductor devices

منو

" Electron and ion-beam characterization of nitride semiconductor devices "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150320
Doc. No	:	ET22112
Main Entry	:	Chad Michael Parish
Title Proper	:	Electron and ion-beam characterization of nitride semiconductor devices
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Gallium nitride (GaN) and its alloys are used to manufacture green-to-ultraviolet range light emitting diodes (LEDs) for the solid-state lighting industry.However, heteroepitaxial growth on substrates such as 6H-Sic or a-AI2O3 results inLEDs with large densities of crystal defects. Cathodoluminescence (CL) andelectron-beam-induced current (EBIC) are SEM-based techniques that are used toprobe the optoelectronic behavior of GaN LEDs and defects at the sub-micrometerscale.This work examines the optoelectronic properties of defects in GaN-basedLED devices. First, computer modeling of the polarization fields in quantum wellswas performed, and quantitative predictions...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45312.pdf
Title and statement of responsibility and	:	Electron and ion-beam characterization of nitride semiconductor devices [Thesis]