HETEROJUNCTION BIPOLAR TRANSISTOR FOR POWER SWITCHING APPLICATIONS

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" HETEROJUNCTION BIPOLAR TRANSISTOR FOR POWER SWITCHING APPLICATIONS "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	150165
Doc. No	:	ET21957
Main Entry	:	Brian James Johnson
Title Proper	:	HETEROJUNCTION BIPOLAR TRANSISTOR FOR POWER SWITCHING APPLICATIONS
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The design, fabrication, and analysis of an aluminum gallium nitride / 4H siliconcarbide heterojunction bipolar transistor for power switching applications arediscussed. Due to a number of processing improvements over previously reportedAlGaN / SiC HBT's in the scientic literature, this device was able to demonstratefor the rst time operation in common-emitter mode. The devices produceda common-emitter gain less than unity, and the reasons for this are thoroughly investigated.Preliminary experiments on AlGaN / 4H-SiC heterojunction diodes arealso discussed, in which the aluminum alloy fraction and SiC surface preparationwere varied to investigate their eect on the hetero-interface quality. Optimizationof a number of unit processes including unbuered selective area growth and ohmiccontact formation are reviewed. Future design and process improvements for theHBT's are proposed..,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL45153.pdf
Title and statement of responsibility and	:	HETEROJUNCTION BIPOLAR TRANSISTOR FOR POWER SWITCHING APPLICATIONS [Thesis]