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Document Type : Latin Dissertation
Language of Document : English
Record Number : 150025
Doc. No : ET21817
Main Entry : Zhihong FENG
Title Proper : THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY Hong Kong
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : The combination of wide band-gap and built-in electrical polarization renders111-nitride HEMTs ideal for high-power, high-frequency, and high-breakdown mi-crowave power amplifiers. However, 111-nitrides heteroepitaxially grown on sapphiresubstrates contain high-density dislocations, which adversely affect device perform-ance. Currently, the main challenge to enhance device performance is to reduce thedislocation densities in the bulk, layer interfaces, as well as the surface morphologyof the AlGaNIGaN heterostructures.This thesis focuses on enhanced DC characteristics and RF performance of III-nitride HEMTs grown on sapphire substrates by MOCVD. Firstly, the HEMTs prin-ciple, MOCVD growth, materials characterization, and initial device characteristicsof conventional 111-nitride HEMTs are introduced. The thermal stability of 2DEG in111-nitride HEMTs is presented. The 2DEG conductivity degraded when the AlGaN,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL45003.pdf
Title and statement of responsibility and : THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY Hong Kong [Thesis]
 
 
 
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