Fabrication and Characterization of Hybrid Si-on-SiC Wafers

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" Fabrication and Characterization of Hybrid Si-on-SiC Wafers "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	149932
Doc. No	:	ET21724
Main Entry	:	Steven G. Whipple
Title Proper	:	Fabrication and Characterization of Hybrid Si-on-SiC Wafers
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Multiple 50 and 75 mm hybrid Si-on-SiC substrates consisting of thin film[100] Si (1 m) on bulk 6H and 4H SiC wafers were fabricated using novel lowtemperature(150.C) wafer bonding and slicing techniques. These substrates weredeveloped to be competitive with Si and SOI technology for the fabrication of Sielectronics. A set of samples was prepared comparing various thicknesses of SiO2(60-520nm) as an intermediate bonding layer between the two materials. A variety oftest structures such as Van der Pauw structures, linear transmission line model arraysand resistors were fabricated in the Si layers using standard Si processing (such aslithography, B-diffusion, etching and oxidation) in order to characterize the..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL44906.pdf
Title and statement of responsibility and	:	Fabrication and Characterization of Hybrid Si-on-SiC Wafers [Thesis]