Interface Modulation Spectroscopy and Doping Physics in Amorphous Silicon

منو

" Interface Modulation Spectroscopy and Doping Physics in Amorphous Silicon "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	149537
Doc. No	:	ET21329
Main Entry	:	Kai Zhu
Title Proper	:	Interface Modulation Spectroscopy and Doping Physics in Amorphous Silicon
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	We have de\*eloped an interface-modulation spectroscnp~ that probes the opticalspectra of dopants and defccts at interface regions a few nanometers \vide inscrniconductor d c ~ i c e such as p-i-n diodes. The method in\.ol\.cs detecting themoduiation of the optical transmittance or rctlectancc ofdiodcs due to modulation of theelectrical space-charge accun~ulated near these interfaces. N'c h3\.c applied the method todiodcs based on hydrogenated.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL44486.pdf
Title and statement of responsibility and	:	Interface Modulation Spectroscopy and Doping Physics in Amorphous Silicon [Thesis]