CHARACTERIZATION OF 4H-SiC MOSFETs USING FIRST PRINCIPLES COULOMB SCATTERING MOBILITY MODELING AND DEVICE SIMULATION

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" CHARACTERIZATION OF 4H-SiC MOSFETs USING FIRST PRINCIPLES COULOMB SCATTERING MOBILITY MODELING AND DEVICE SIMULATION "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	149479
Doc. No	:	ET21271
Main Entry	:	Siddharth Potbhare
Title Proper	:	CHARACTERIZATION OF 4H-SiC MOSFETs USING FIRST PRINCIPLES COULOMB SCATTERING MOBILITY MODELING AND DEVICE SIMULATION
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Detailed analysis of a 4H-SiC MOSFET has been carried out by numerically solving thesteady state semiconductor Drift-Diffusion equations. Mobility models for bulk phononscattering, surface phonon scattering, surface roughness scattering, Coulomb scattering byinterface traps and oxide charges, and high field effects, have been developed and implemented.A first principles Coulomb scattering mobility model has been developed specifically to modelthe physics of the inversion layer in 4H-SiC MOSFETs. The Coulomb scattering model takes intoaccount, scattering of mobile.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL44427.pdf
Title and statement of responsibility and	:	CHARACTERIZATION OF 4H-SiC MOSFETs USING FIRST PRINCIPLES COULOMB SCATTERING MOBILITY MODELING AND DEVICE SIMULATION [Thesis]