EDGE TERMINATION AND RESURF TECHNOLOGY IN POWER SILICON CARBIDE DEVICES

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" EDGE TERMINATION AND RESURF TECHNOLOGY IN POWER SILICON CARBIDE DEVICES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	149296
Doc. No	:	ET21088
Main Entry	:	Igor Sankin
Title Proper	:	EDGE TERMINATION AND RESURF TECHNOLOGY IN POWER SILICON CARBIDE DEVICES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The effect of the electrical field enhancement at the junction discontinuities andits impact on the on-state resistance of power semiconductor devices was investigated. Asystematic analysis of the mechanisms behind the techniques that can be used for theedge termination in power semiconductor devices was performed. The influence of thepassivation layer properties, such as effective interface charge and dielectric permittivity,on the devices with different edge terminations was analyzed using numerical simulation..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL44236.pdf
Title and statement of responsibility and	:	EDGE TERMINATION AND RESURF TECHNOLOGY IN POWER SILICON CARBIDE DEVICES [Thesis]