INVESTIGATION OF DEFECTS IN N-TYPE 4H-SIC AND SEMI-INSULATING 6HSIC USING PHOTOLUMINESCENCE SPECTROSCOPY

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" INVESTIGATION OF DEFECTS IN N-TYPE 4H-SIC AND SEMI-INSULATING 6HSIC USING PHOTOLUMINESCENCE SPECTROSCOPY "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	149011
Doc. No	:	ET20803
Main Entry	:	Sashi Kumar Chanda
Title Proper	:	INVESTIGATION OF DEFECTS IN N-TYPE 4H-SIC AND SEMI-INSULATING 6HSIC USING PHOTOLUMINESCENCE SPECTROSCOPY
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Photoluminescence spectroscopy is one of the most efficient and sensitive noncontacttechniques used to investigate defects in SiC. In this work, room temperaturephotoluminescence mapping is employed to identify different defects that influencematerial properties. The correlation of the distribution of these defects in n-type 4H-SiCsubstrates with electronic properties of SiC revealed connection between the deep levelsacting as efficient recombination.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL43948.pdf
Title and statement of responsibility and	:	INVESTIGATION OF DEFECTS IN N-TYPE 4H-SIC AND SEMI-INSULATING 6HSIC USING PHOTOLUMINESCENCE SPECTROSCOPY [Thesis]