DEBRIS CHARACTERIZATION AND MITIGATION OF DROPLET LASER PLASMA SOURCES FOR EUV LITHOGRAPHY

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" DEBRIS CHARACTERIZATION AND MITIGATION OF DROPLET LASER PLASMA SOURCES FOR EUV LITHOGRAPHY "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	148860
Doc. No	:	ET20652
Main Entry	:	KAZUTOSHI TAKENOSHITA
Title Proper	:	DEBRIS CHARACTERIZATION AND MITIGATION OF DROPLET LASER PLASMA SOURCES FOR EUV LITHOGRAPHY
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The lithographic technique for semiconductor chip fabrication has progressively advancedover the last 35 years in terms of the integration, complexity, throughput and productivity.In fact, although the number of transistors on a single chip has increased by nearlya million times over this time period, the price of the chip has remained almost constant.The key to this advancement is the minimum feature size of the fabrication processes. Thenumber of transistors incorporate a microchip can depend on the cihp size and the minimum.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL43792.pdf
Title and statement of responsibility and	:	DEBRIS CHARACTERIZATION AND MITIGATION OF DROPLET LASER PLASMA SOURCES FOR EUV LITHOGRAPHY [Thesis]