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Document Type : Latin Dissertation
Language of Document : English
Record Number : 148668
Doc. No : ET20460
Main Entry : ARATHI RAJAGOPALAN
Title Proper : FINITE ELEMENT ANALYSIS AND MOLECULAR MECHANICS MODELING OF NANOHETEROEPITAXIAL STRAIN PARTITIONING
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Performance improvements for each new silicon CMOS technology node have beenachieved traditionally by geometric scaling which requires increases in the channel dopingconcentration and vertical electrical field to mitigate short channel effects. However, these twoaspects of geometric scaling adversely affect carrier impurity scattering and high-field saturationvelocity. Therefore, they diminish improvements of drive current. Recently, an alternativemethod that is being utilized to improve performance and counteract the negative effects ofscaling is to enhance carrier mobility through the introduction of strain in the channel [1-3]. In.
Subject : Electericl tess
: برق
electronic file name : TL43595.pdf
Title and statement of responsibility and : FINITE ELEMENT ANALYSIS AND MOLECULAR MECHANICS MODELING OF NANOHETEROEPITAXIAL STRAIN PARTITIONING [Thesis]
 
 
 
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