DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF InGaAsN GROWN BY MBE AND MOCVD FOR MULTI-JUNCTION SOLAR CELLS

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" DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF InGaAsN GROWN BY MBE AND MOCVD FOR MULTI-JUNCTION SOLAR CELLS "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	148647
Doc. No	:	ET20439
Main Entry	:	Siva Prasad Kotamraju
Title Proper	:	DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF InGaAsN GROWN BY MBE AND MOCVD FOR MULTI-JUNCTION SOLAR CELLS
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The 111-V compound semiconductor alloy InGaAsN, which may be used as a part of aelectricity generating solar cell, has a potential up to 40 efficiency when put into amultilayer cell consisting of InGaP, GaAs and Ge. Although minority carrier electronsare not intentionally injected into the depletion region of the measured samples, electrontraps are detected in both Schottky barrier and p-n junction InGaAsN and GaAsNsamples and these have adversely affected the performance of such devices. Deep LevelTransient Spectroscopy (DLTS) - a high frequency transient capacitance technique- has.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL43574.pdf
Title and statement of responsibility and	:	DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF InGaAsN GROWN BY MBE AND MOCVD FOR MULTI-JUNCTION SOLAR CELLS [Thesis]