HIGH QUALITY GATE DIELECTRIC FOR HIGH POWER AIGaNIGaN MOSHFETs

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" HIGH QUALITY GATE DIELECTRIC FOR HIGH POWER AIGaNIGaN MOSHFETs "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	148569
Doc. No	:	ET20361
Main Entry	:	Shiva Rai
Title Proper	:	HIGH QUALITY GATE DIELECTRIC FOR HIGH POWER AIGaNIGaN MOSHFETs
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	AlGaNIGaN based heterostructure field effect transistors (HFETs) have emerged asthe most promising candidates for the next generation microwave applications like wirelesscommunications, satellite communications, military and commercial radar systems. Withsome innovative device designs like recessed gate, field-plate technique and surfacepassivation, power densities as high as 32 Wlmm at 4GHz and 7Wlmm at 40GHz arereported. For these devices to be viable for practical application, the reliability at these high.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL43488.pdf
Title and statement of responsibility and	:	HIGH QUALITY GATE DIELECTRIC FOR HIGH POWER AIGaNIGaN MOSHFETs [Thesis]