Compact Modeling of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor

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" Compact Modeling of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	148520
Doc. No	:	ET20312
Main Entry	:	SHI Xuejie
Title Proper	:	Compact Modeling of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Metal-oxide-semiconductor (MOS) field-effect transistor (FET) scaling is a keyfactor that enabled the IC industry to follow the projection of Moore's law for thepast -35 years. However, this scaling process becomes increasingly difficult as sev-eral limits from both process and device performance are approaching, as the tech-nology node goes to 65nrn and beyond. To extend the life of MOSFET scaling, non-classical MOSFETs were introduced to the roadmap. The double-gate (DG) MOS-FET is one of the most promising candidates. This thesis focuses on modeling of DGMOSFET and covers mainly three parts: general Poisson-.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL43439.pdf
Title and statement of responsibility and	:	Compact Modeling of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor [Thesis]