خط مشی دسترسیدرباره ما
ثبت نامثبت نام
راهنماراهنما
فارسی
ورودورود
صفحه اصلیصفحه اصلی
جستجوی مدارک
تمام متن
منابع دیجیتالی
رکورد قبلیرکورد بعدی
Document Type : Latin Dissertation
Language of Document : English
Record Number : 148520
Doc. No : ET20312
Main Entry : SHI Xuejie
Title Proper : Compact Modeling of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Metal-oxide-semiconductor (MOS) field-effect transistor (FET) scaling is a keyfactor that enabled the IC industry to follow the projection of Moore's law for thepast -35 years. However, this scaling process becomes increasingly difficult as sev-eral limits from both process and device performance are approaching, as the tech-nology node goes to 65nrn and beyond. To extend the life of MOSFET scaling, non-classical MOSFETs were introduced to the roadmap. The double-gate (DG) MOS-FET is one of the most promising candidates. This thesis focuses on modeling of DGMOSFET and covers mainly three parts: general Poisson-.
Subject : Electericl tess
: برق
electronic file name : TL43439.pdf
Title and statement of responsibility and : Compact Modeling of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor [Thesis]
 
 
 
(در صورت عدم وضوح تصویر اینجا را کلیک نمایید)