Devices Using Ballistic Transport of Two Dimensional Electron Gas in delta doped GaAs High Electron Mobility Transistor Structures

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" Devices Using Ballistic Transport of Two Dimensional Electron Gas in delta doped GaAs High Electron Mobility Transistor Structures "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	148473
Doc. No	:	ET20265
Main Entry	:	Sungmu Kang
Title Proper	:	Devices Using Ballistic Transport of Two Dimensional Electron Gas in delta doped GaAs High Electron Mobility Transistor Structures
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	In this thesis, devices using the ballistic transport of two dimensional electron gas(2DEG) in GaAs High Electron Mobility Transistor(HEMT) structure is fabricatedand their dc and ac properties are characterized. This study gives insight on oper-ation and applications of modern submicron devices with ever reduced gate lengthcomparable to electron mean free path. The ballistic transport is achieved usingboth temporal and spatial limits in this.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL43391.pdf
Title and statement of responsibility and	:	Devices Using Ballistic Transport of Two Dimensional Electron Gas in delta doped GaAs High Electron Mobility Transistor Structures [Thesis]