Optimization of RF HBTs In 0.35 ym SiGe BiCMOS TechnologyET C A L I B ~ &RIQUEMENTET C A L I B ~&RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES

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" Optimization of RF HBTs In 0.35 ym SiGe BiCMOS TechnologyET C A L I B ~ &RIQUEMENTET C A L I B ~&RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	154852
Doc. No	:	ET26644
Main Entry	:	Raymond S.P. Tam
Title Proper	:	Optimization of RF HBTs In 0.35 ym SiGe BiCMOS TechnologyET C A L I B ~ RIQUEMENTET C A L I B ~RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Motivated by the fast-growing demand for analog RF ICs, SiGe-HBT has receivedwide attention due to its compatibility with existing Si BiCMOS processes. The objectiveof this thesis is to develop a systematic optimization strategy for the design of RF HBTs in.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL50918.pdf
Title and statement of responsibility and	:	Optimization of RF HBTs In 0.35 ym SiGe BiCMOS TechnologyET C A L I B ~ RIQUEMENTET C A L I B ~RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES [Thesis]