Self-Assembled Quantum Dot Semiconductor Nanostructures Modeling: Photonic Device ApplicationsET C A L I B ~ &RIQUEMENTET C A L I B ~&RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES

منو

" Self-Assembled Quantum Dot Semiconductor Nanostructures Modeling: Photonic Device ApplicationsET C A L I B ~ &RIQUEMENTET C A L I B ~&RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	154719
Doc. No	:	ET26511
Main Entry	:	Abdessamad Benhsaien
Title Proper	:	Self-Assembled Quantum Dot Semiconductor Nanostructures Modeling: Photonic Device ApplicationsET C A L I B ~ RIQUEMENTET C A L I B ~RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	A microscopic analysis of a vertical stack of self-assembled InAs/GaAs lens-shaped quantum dotnanostructures is presented. The analysis revolves around a rigorous Hamiltonian formulation ofan eight-band k.p. perturbation to account for the lattice-mismatch strain endured by the islands.The numerical implementation yields the effective bandgap energy and electronic structure of an.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL50784.pdf
Title and statement of responsibility and	:	Self-Assembled Quantum Dot Semiconductor Nanostructures Modeling: Photonic Device ApplicationsET C A L I B ~ RIQUEMENTET C A L I B ~RIQUEMENT.POMPES PAR TRANSITIONS MULTIPLES [Thesis]