Characterization of Surface Passivation of Crystalline Silicon by Hydrogenated Amorphous Silicon using Photocarrier Radiometry.POMPES PAR TRANSITIONS MULTIPLES

منو

" Characterization of Surface Passivation of Crystalline Silicon by Hydrogenated Amorphous Silicon using Photocarrier Radiometry.POMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	154587
Doc. No	:	ET26379
Main Entry	:	Keith R. Leong
Title Proper	:	Characterization of Surface Passivation of Crystalline Silicon by Hydrogenated Amorphous Silicon using Photocarrier Radiometry.POMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	In the silicon heterojunction solar cell, the crystalline silicon (c-Si) surface forms aninterface with hydrogenated amorphous silicon (a-Si:H). This thesis reports on the developmentand evaluation of surface passivation schemes of c-Si with a-Si:H. The.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL50652.pdf
Title and statement of responsibility and	:	Characterization of Surface Passivation of Crystalline Silicon by Hydrogenated Amorphous Silicon using Photocarrier Radiometry.POMPES PAR TRANSITIONS MULTIPLES [Thesis]