NOISE MODELLING OF SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS AT MILLIMETRE-WAVE FREQUENCIES.POMPES PAR TRANSITIONS MULTIPLES

منو

" NOISE MODELLING OF SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS AT MILLIMETRE-WAVE FREQUENCIES.POMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	154577
Doc. No	:	ET26369
Main Entry	:	Kenneth Hoi Kan Yau
Title Proper	:	NOISE MODELLING OF SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS AT MILLIMETRE-WAVE FREQUENCIES.POMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Using 2D device simulations, it is predicted that the cutoff frequencies of SiGe HBTs canbe scaled beyond 5OOGHz. These devices have the potential to enable advanced millimetre-wave circuits. However, shot noise correlation, which is captured through noise transit time,becomes increasingly important as circuit designers continue to push the operating frequenciesof the circuits..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL50642.pdf
Title and statement of responsibility and	:	NOISE MODELLING OF SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS AT MILLIMETRE-WAVE FREQUENCIES.POMPES PAR TRANSITIONS MULTIPLES [Thesis]