Characterization of Electronically Active Defects in Hafnium Dioxide High-K Gate Dielectrics.POMPES PAR TRANSITIONS MULTIPLES

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" Characterization of Electronically Active Defects in Hafnium Dioxide High-K Gate Dielectrics.POMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	154349
Doc. No	:	ET26141
Main Entry	:	DANIEL FELNHOFER
Title Proper	:	Characterization of Electronically Active Defects in Hafnium Dioxide High-K Gate Dielectrics.POMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The trapping behaviour of electronic defects in high-K, Hf02, metal-oxide-semiconductor (MOS) capacitors was investigated using capacitance-voltage and.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL50414.pdf
Title and statement of responsibility and	:	Characterization of Electronically Active Defects in Hafnium Dioxide High-K Gate Dielectrics.POMPES PAR TRANSITIONS MULTIPLES [Thesis]