MILLIMETRE-WAVE DEVICE CHARACTERIZATION FOR NANO-CMOS IC DESIGN.POMPES PAR TRANSITIONS MULTIPLES

منو

" MILLIMETRE-WAVE DEVICE CHARACTERIZATION FOR NANO-CMOS IC DESIGN.POMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	154167
Doc. No	:	ET25959
Main Entry	:	Alain Marc Mangan
Title Proper	:	MILLIMETRE-WAVE DEVICE CHARACTERIZATION FOR NANO-CMOS IC DESIGN.POMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	At the 90-nm node, silicon technologies have reached a point where the transistor fT and fhtAxsimultaneously exceed 150 GHz, with a 1.2 V supply. With low fabrication costs for high volumesof circuits, RF-CMOS technologies are ideally suited to realize exciting new high bandwidth con-sumer products that operate in the mm-wave regime. Before this can happen,.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL50232.pdf
Title and statement of responsibility and	:	MILLIMETRE-WAVE DEVICE CHARACTERIZATION FOR NANO-CMOS IC DESIGN.POMPES PAR TRANSITIONS MULTIPLES [Thesis]