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" Integration of Complementary EDMOS Transistors in a Standard 0.35pm CMOS Technology for 40V Applications.POMPES PAR TRANSITIONS MULTIPLES "


Document Type : Latin Dissertation
Language of Document : English
Record Number : 153964
Doc. No : ET25756
Main Entry : Vivian Wing Yan Ma
Title Proper : Integration of Complementary EDMOS Transistors in a Standard 0.35pm CMOS Technology for 40V Applications.POMPES PAR TRANSITIONS MULTIPLES
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Abstract : The design and implementation of complementary Extend Drain MOSFET (EDMOS)for high voltage IC (HVIC) is presented in this thesis. The complementary EDMOS devicesare designed to be compatible with a standard 0.35pm CMOS technology from AKM, Japan.The proposed complementary EDMOS devices require three additional mask layers to.
Subject : Electericl tess
: برق
electronic file name : TL50022.pdf
Title and statement of responsibility and : Integration of Complementary EDMOS Transistors in a Standard 0.35pm CMOS Technology for 40V Applications.POMPES PAR TRANSITIONS MULTIPLES [Thesis]
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TL50022.pdf
TL50022.pdf
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