HYDROGENATED AMORPHOUS SILICON GROWN AT LOW TEMPERATURE USING THE DC SADDLE-FIELD DEPOSITION SYSTEM.POMPES PAR TRANSITIONS MULTIPLES

منو

" HYDROGENATED AMORPHOUS SILICON GROWN AT LOW TEMPERATURE USING THE DC SADDLE-FIELD DEPOSITION SYSTEM.POMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	153701
Doc. No	:	ET25493
Main Entry	:	Jennifer Sue Petherick
Title Proper	:	HYDROGENATED AMORPHOUS SILICON GROWN AT LOW TEMPERATURE USING THE DC SADDLE-FIELD DEPOSITION SYSTEM.POMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	A study of the dependence of amorphous silicon film properties on temperature has beencarried out using the dc saddle-field glow discharge deposition method. Depositions werecarried out using pure silane at substrate temperatures ranging from 50پ‍-C to 200پ‍-C. The.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL49749.pdf
Title and statement of responsibility and	:	HYDROGENATED AMORPHOUS SILICON GROWN AT LOW TEMPERATURE USING THE DC SADDLE-FIELD DEPOSITION SYSTEM.POMPES PAR TRANSITIONS MULTIPLES [Thesis]