DEVELOPMENT OF A RF BJT IN STANDARD 0.35ym CMOS TECHNOLOGYPOMPES PAR TRANSITIONS MULTIPLES

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" DEVELOPMENT OF A RF BJT IN STANDARD 0.35ym CMOS TECHNOLOGYPOMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	153184
Doc. No	:	ET24976
Main Entry	:	I-Shan Michael Sun
Title Proper	:	DEVELOPMENT OF A RF BJT IN STANDARD 0.35ym CMOS TECHNOLOGYPOMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The demand for Analog and RF ICs for wireless communication is growing rapidly in recentyears. This propels the development of low cost implementation such as RF BiCMOS technology,allowing the design of wireless circuits with complex CMOS functionality. The objective of thisthesis is to develop a RF BiCMOS process by integrating RF bipolar transistor with a standard.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL49190.pdf
Title and statement of responsibility and	:	DEVELOPMENT OF A RF BJT IN STANDARD 0.35ym CMOS TECHNOLOGYPOMPES PAR TRANSITIONS MULTIPLES [Thesis]