Carrier-Density-Wave Depth Prolilometric Measurements in Semiconductor Si Wafers Using Laser Infrared Photothermal RadiometryPOMPES PAR TRANSITIONS MULTIPLES

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" Carrier-Density-Wave Depth Prolilometric Measurements in Semiconductor Si Wafers Using Laser Infrared Photothermal RadiometryPOMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	152870
Doc. No	:	ET24662
Main Entry	:	Derrick Shaughnessy
Title Proper	:	Carrier-Density-Wave Depth Prolilometric Measurements in Semiconductor Si Wafers Using Laser Infrared Photothermal RadiometryPOMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The sensitivity of the photothermal radiometric signal to spatially localizeddamage for several different optical absorption depths is presented. Numericalsimulations of the PTR response to the eiectronic parameters and optical penetrationdepth of the excitation source are presented and used to determine the uniqueness of.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL48871.pdf
Title and statement of responsibility and	:	Carrier-Density-Wave Depth Prolilometric Measurements in Semiconductor Si Wafers Using Laser Infrared Photothermal RadiometryPOMPES PAR TRANSITIONS MULTIPLES [Thesis]