"Low Temperature SFd02 ECR Plasma Etching for Polysilicon Gates"POMPES PAR TRANSITIONS MULTIPLES

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" "Low Temperature SFd02 ECR Plasma Etching for Polysilicon Gates"POMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	152839
Doc. No	:	ET24631
Main Entry	:	Prof. N. G . Tarr
Title Proper	:	"Low Temperature SFd02 ECR Plasma Etching for Polysilicon Gates"POMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	In previous research SF6 plasma etching at substrate temperatures near- 130 " C has beenshown to provide a promising alternative to conventional chlorine or bromine plasmaetching for polysilicon gate formation in deep submicron CMOS. This thesis examines.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL48840.pdf
Title and statement of responsibility and	:	"Low Temperature SFd02 ECR Plasma Etching for Polysilicon Gates"POMPES PAR TRANSITIONS MULTIPLES [Thesis]