A Two-Stage Gate Drive Scheme for Snubberless Operation of Power MOSFETs and IGBTsPOMPES PAR TRANSITIONS MULTIPLES

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" A Two-Stage Gate Drive Scheme for Snubberless Operation of Power MOSFETs and IGBTsPOMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	152718
Doc. No	:	ET24510
Main Entry	:	Rishi Sachdeva
Title Proper	:	A Two-Stage Gate Drive Scheme for Snubberless Operation of Power MOSFETs and IGBTsPOMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	A central issue in reducing the size and cost of power converters is the control of - -transistor voltage and current transients during the switching process. Load sidesnubbers and clamps are bulky and e-xpensive. Increasing the gate resistors valuesis inexpensive and simple but switching times as well as power losses are increased.X gate drive scheme is investigated which realizes low-noise, snub berless operationof power MOSFETs and IGBTs without an excessive increase in switching losses orswitching times. A novel gate driver is presented which uses only a few extra low-voltage components. Experimental results are presented for both a power MOSFETand an IGBT in a hard-switching application. It is shown that the proposed driverscheme obtains an acceptable compromise between switching speed, power dissipationand electromagnetic interferences (EMI) ..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL48717.pdf
Title and statement of responsibility and	:	A Two-Stage Gate Drive Scheme for Snubberless Operation of Power MOSFETs and IGBTsPOMPES PAR TRANSITIONS MULTIPLES [Thesis]