خط مشی دسترسیدرباره ما
ثبت نامثبت نام
راهنماراهنما
فارسی
ورودورود
صفحه اصلیصفحه اصلی
جستجوی مدارک
تمام متن
منابع دیجیتالی
رکورد قبلیرکورد بعدی
Document Type : Latin Dissertation
Language of Document : English
Record Number : 152718
Doc. No : ET24510
Main Entry : Rishi Sachdeva
Title Proper : A Two-Stage Gate Drive Scheme for Snubberless Operation of Power MOSFETs and IGBTsPOMPES PAR TRANSITIONS MULTIPLES
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : A central issue in reducing the size and cost of power converters is the control of - -transistor voltage and current transients during the switching process. Load sidesnubbers and clamps are bulky and e-xpensive. Increasing the gate resistors valuesis inexpensive and simple but switching times as well as power losses are increased.X gate drive scheme is investigated which realizes low-noise, snub berless operationof power MOSFETs and IGBTs without an excessive increase in switching losses orswitching times. A novel gate driver is presented which uses only a few extra low-voltage components. Experimental results are presented for both a power MOSFETand an IGBT in a hard-switching application. It is shown that the proposed driverscheme obtains an acceptable compromise between switching speed, power dissipationand electromagnetic interferences (EMI) ..
Subject : Electericl tess
: برق
electronic file name : TL48717.pdf
Title and statement of responsibility and : A Two-Stage Gate Drive Scheme for Snubberless Operation of Power MOSFETs and IGBTsPOMPES PAR TRANSITIONS MULTIPLES [Thesis]
 
 
 
(در صورت عدم وضوح تصویر اینجا را کلیک نمایید)