Deep Etching of Silicon with XeFzPOMPES PAR TRANSITIONS MULTIPLES

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" Deep Etching of Silicon with XeFzPOMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	152637
Doc. No	:	ET24429
Main Entry	:	Behraad Bahreyni
Title Proper	:	Deep Etching of Silicon with XeFzPOMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	Fabrication of microelectromechanical systems (MEMS) requires systems fordepositing and selectively removing of parts of a substrate material. The most commonlyused material in micromachining of diff'ent MEMS devices is silicon. Therefore.depositing and etching of silicon is of great importance in micromachining.One of the candidates for selective etching of silicon is xenon difluoride. XeFtetches silicon isotropicaIIy in its gaseous form without a need for pIasma generation..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL48636.pdf
Title and statement of responsibility and	:	Deep Etching of Silicon with XeFzPOMPES PAR TRANSITIONS MULTIPLES [Thesis]