A 1-V, CMOS on SOI, 1.9-GHz CDMA Low Noise AmplifierPOMPES PAR TRANSITIONS MULTIPLES

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" A 1-V, CMOS on SOI, 1.9-GHz CDMA Low Noise AmplifierPOMPES PAR TRANSITIONS MULTIPLES "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	152377
Doc. No	:	ET24169
Main Entry	:	Heng Jin
Title Proper	:	A 1-V, CMOS on SOI, 1.9-GHz CDMA Low Noise AmplifierPOMPES PAR TRANSITIONS MULTIPLES
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	This thesis deals with the design and implementation of a IV, 1.9GHz low noiseamplifier (LNA) using a 0.5pm CMOS on SO1 technology with 3 levels of metal. Theamplifier is optimized for CDMA applic2tions operating in the 1.93- 1.99GHz band. Theinductive degeneration topology used in the LNA implementation provides low noise andlow power dissipation. The use of CMOS on SO1 technology may lead to an optimumsingle chip implementation of both the analog and digital building blocks of a 1.9GHztransceiver operating from a IV supply. Such an implementation offers reduced cost andimproved reliability..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL48371.pdf
Title and statement of responsibility and	:	A 1-V, CMOS on SOI, 1.9-GHz CDMA Low Noise AmplifierPOMPES PAR TRANSITIONS MULTIPLES [Thesis]