Lateral Current Injection S-Laser with Ion-Implanted Lateral Heterobarriers

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" Lateral Current Injection S-Laser with Ion-Implanted Lateral Heterobarriers "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	152308
Doc. No	:	ET24100
Main Entry	:	Andrew Stok
Title Proper	:	Lateral Current Injection S-Laser with Ion-Implanted Lateral Heterobarriers
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The topological degree of freedom of the laterd current injection (LCI) laser was exploredfor the first time. Various LC1 s-laser devices having a raised-cosine lateral variation of the ridgewaveguide were designed and fabricated in the GaAs / A1,Gal-,As / Ino.lG~.9As material sys-tem. Lateral heterobarriers and contacts were defined simultaneously through ion-implantation.The LC1 s-laser concept was successfully proven: a device with a 200 pm transition length and2 ,urn waveguide ridge width lased at 831 nrn with a threshold of 6.1 mA a t f 00 K.Based on the insight gained in this work, a new fabrication technique is suggested in orderto improve device performance. The pursuit of novel functional devices-for example, an LC1y-laser-which build on the discoveries made in this work is proposed..
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL48302.pdf
Title and statement of responsibility and	:	Lateral Current Injection S-Laser with Ion-Implanted Lateral Heterobarriers [Thesis]