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Document Type : Latin Dissertation
Language of Document : English
Record Number : 152174
Doc. No : ET23966
Main Entry : Kang-I11 Seo
Title Proper : CHARACTERIZATION, ENGINEERING, AND RELIABILITY OF NANO-SCALE HIGH-K DIELECTRICS AND SEMICONDUCTORS INTERFACES:
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : The continued scaling of silicon complementary metal-oxide-semiconductor(CMOS) devices has lead to a need to replace the Si02 gate insulator with high-kdielectric oxides, such as Zr02 and Hf02-based materials, to maintain a smallerleakage current without losing electrostatic gate control of the channel.
Subject : Electericl tess
: برق
electronic file name : TL48112.pdf
Title and statement of responsibility and : CHARACTERIZATION, ENGINEERING, AND RELIABILITY OF NANO-SCALE HIGH-K DIELECTRICS AND SEMICONDUCTORS INTERFACES: [Thesis]
 
 
 
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