CHARACTERIZATION, ENGINEERING, AND RELIABILITY OF NANO-SCALE HIGH-K DIELECTRICS AND SEMICONDUCTORS INTERFACES:

منو

" CHARACTERIZATION, ENGINEERING, AND RELIABILITY OF NANO-SCALE HIGH-K DIELECTRICS AND SEMICONDUCTORS INTERFACES: "

Document Type	:	Latin Dissertation
Language of Document	:	English
Record Number	:	152174
Doc. No	:	ET23966
Main Entry	:	Kang-I11 Seo
Title Proper	:	CHARACTERIZATION, ENGINEERING, AND RELIABILITY OF NANO-SCALE HIGH-K DIELECTRICS AND SEMICONDUCTORS INTERFACES:
Note	:	This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract	:	The continued scaling of silicon complementary metal-oxide-semiconductor(CMOS) devices has lead to a need to replace the Si02 gate insulator with high-kdielectric oxides, such as Zr02 and Hf02-based materials, to maintain a smallerleakage current without losing electrostatic gate control of the channel.
Subject	:	Electericl tess
	:	برق
electronic file name	:	TL48112.pdf
Title and statement of responsibility and	:	CHARACTERIZATION, ENGINEERING, AND RELIABILITY OF NANO-SCALE HIGH-K DIELECTRICS AND SEMICONDUCTORS INTERFACES: [Thesis]