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Document Type : Latin Dissertation
Language of Document : English
Record Number : 152119
Doc. No : ET23911
Main Entry : Rachael L. Myers-Ward
Title Proper : High Growth Rate SiC CVD via Hot-Wall Epitaxy
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : This dissertation research focused on the growth of 4H-SiC epitaxial layers inlow-pressure horizontal hot-wall chemical vapor deposition (CVD) reactors. The goal ofthe research was to develop a growth process that maximized the growth rate andproduced films of smooth morphology. The epitaxial growth of SiC was carried out intwo different reactor sizes, a 75 mm reactor and a 200 mm reactor. The maximumrepeatable growth rate achieved was 30-32 m/h in the 200 mm reactor using thestandard chemistry of hydrogen-propane-silane (H2-C3H8-SiH4) at growth temperatures .1600 C, which is the highest growth rate reported to date in a horizontal hot-wall reactorat these temperatures. This growth rate was achieved with a silane flow rate of 30 sccm.The process development and characterization of 4H-SiC epitaxial films grown using thestandard chemistry are presented.There are many ways to increase the growth rate, such as changing the pressure,increasing the reactant flow rates, or increasing the temperature. The method of choice.
Subject : Electericl tess
: برق
electronic file name : TL48057.pdf
Title and statement of responsibility and : High Growth Rate SiC CVD via Hot-Wall Epitaxy [Thesis]
 
 
 
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