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"
MODELING OF STRAIN PARTITIONING IN NANOHETEROSTRUCTURES
"
Document Type
:
Latin Dissertation
Language of Document
:
English
Record Number
:
152007
Doc. No
:
ET23799
Main Entry
:
UMESH UTHAMAN, B.E.E.C
Title Proper
:
MODELING OF STRAIN PARTITIONING IN NANOHETEROSTRUCTURES
Note
:
This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract
:
Modeling of elastic and plastic strain relaxation in nanoheteroepitaxial systems is important fordescribing self-assembled and patterned crystal growth phenomena of nanostructures and forsimulating growth pathways to novel nanoheterostructures. Two important concepts that haveattracted much attention are the concepts of strain partitioning, introduced by Hirth and Evans in1986, and substrate compliancy proposed by Lo in 91. Although, Kastner (2003) arguedagainst strain partitioning and substrate compliancy on planar structures based on elementarymechanics, exponential decay and macroscopic sliding has been observed on patternednanostructures (Yin, 2003 and Zubia and Hersee, 1999). Zubia predicted enhanced substratecompliancy in nanoheterostructures using continuum theory by combing the strain partitioningwith 3D strain decay. However this model and almost all other models incorporate concepts oftotal lattice mismatch, and compatibility.............-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject
:
Electericl tess
:
برق
electronic file name
:
TL47059.pdf
Title and statement of responsibility and
:
MODELING OF STRAIN PARTITIONING IN NANOHETEROSTRUCTURES [Thesis]
http://localhost/site/catalogue/152007
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TL47059.pdf
TL47059.pdf
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