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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151996
Doc. No : ET23788
Main Entry : Bo Yang
Title Proper : STUDY ON-CHIP METAL-INSULATORSEMICONDUCTOR- METAL INTERCONNECTS WITH THEALTERNATING-DIRECTION-IMPLICIT FINITE-DIFFERENCE TIME-DOMAIN METHOD
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : The Alternating-Direction-Implicit Finite-Difference Time-Domain method isused to analyze the on-chip Metal-Insulator-Semiconductor-Metal interconnects bysolving Maxwellبs equations in time domain. This method is efficient in solvingproblems with fine geometries much smaller than the shortest wavelength of interest.The iteration algorithm is evaluated thoroughly with respects to stability, numericaldispersion, grid size, time-step size etc..The dielectric quasi-TEM mode, the slow wave mode, and the skin-effectmode of the MISM structure are all analyzed. We find that semiconductors canreadily operate from the slow wave mode, to the transition region, to the skin effectmode in state of art technology. This thesis shows that the silicon substrate losses andthe metal line losses can be modeled with high resolution. Signal dispersion andattenuation over a wide range of doping densities and operating frequencies is.............-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL47048.pdf
Title and statement of responsibility and : STUDY ON-CHIP METAL-INSULATORSEMICONDUCTOR- METAL INTERCONNECTS WITH THEALTERNATING-DIRECTION-IMPLICIT FINITE-DIFFERENCE TIME-DOMAIN METHOD [Thesis]
 
 
 
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