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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151995
Doc. No : ET23787
Main Entry : Arun S Mampazhy
Title Proper : COMPOSITE QUANTUM WELL: COEXISTENCEOF ELECTRONS AND HOLES
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : A field effect transistor is fabricated using a composite quantum well structureconsisting of adjacent semiconductor quantum wells, GaSb and InAs, sandwiched byAlSb and GaSb barriers. It is found that with a proper gate bias the concentration ofthe hole and the electron carriers in this device can be controlled. Properties of thisdevice can be utilized in realizing lateral resonant interband tunneling diodes, singleelectrons transistors and other interesting quantum devices..............-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL47047.pdf
Title and statement of responsibility and : COMPOSITE QUANTUM WELL: COEXISTENCEOF ELECTRONS AND HOLES [Thesis]
 
 
 
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