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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151991
Doc. No : ET23783
Main Entry : Reza Ghodssi
Title Proper : INTEGRATION OF BENZOCYCLOBUTENE POYMERS AND SILICON MICROMACHNED STRUCTURES FABRICATED WITH ANISOTROPIC WET ETCHING
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : Integration of low dielectric constant Benzocyclobutene (BCB) film with deepetched structures in silicon allows the fabrication of MEMS devices with lowparasitic loss. A fabrication process is developed for integration of thin BCB film anddeep anisotropically-etched grooves in silicon using potassium hydroxide (KOH).Gold (Au) is used as an etch mask to protect the low-k film during the highlycorrosive,long, and high-temperature KOH etching process. Metal/BCB adhesion is akey parameter in this masking design. Adhesion of the BCB and metal mask wasimproved by cure management of the BCB before and after metallization, surfacetreatment of the BCB before metallization, and high-temperature metallization. Teststructures were fabricated to demonstrate.............-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL47043.pdf
Title and statement of responsibility and : INTEGRATION OF BENZOCYCLOBUTENE POYMERS AND SILICON MICROMACHNED STRUCTURES FABRICATED WITH ANISOTROPIC WET ETCHING [Thesis]
 
 
 
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