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Document Type : Latin Dissertation
Language of Document : English
Record Number : 151959
Doc. No : ET23751
Main Entry : Armando J. R~ja de la Asuncion
Title Proper : MEDIDAS INTERFEROMETRICAS DEL COEFlClENTE PIEZOELECTRICOS d33 EN PELICULAS DE NITRURO DE ALUMlNlO
Note : This document is digital این مدرک بصورت الکترونیکی می باشد
Abstract : An interferometer was constructed which is capable of resolving linear displacements of10-l2 meter (0.0lA). A feedback loop was introduced to stabilize the system against lowfrecuency fluctuations of mechanical or thermal origin. This interferometric system wastested by measuring the piezoelectric coefficient dl 1 of quartz (SO2). The value obtainedwas 2.18 pmlv, which is within 3.6 of the accepted value. The same system wasutilized for measuring the piezoelectric coefficient d33 of aluminun nitride (AlN) thinfilms. These were grown by pulsed laser deposition on Si(ll1) substrates and are 6000 Athick. X ray diffraction studies reveal that the AlN films are polycristaline and have ahexagonal wurzite structure. The cristals are well oriented, with the c direction parallel tothe silicon 4 11m direction. The value measured for d33 was 4.03 prnlv. After correctingfor substrate clamping, the coefficient d33 of bulk A1N was found to be 5.7 pmlv, which isvery close to values previously reported in the literature..............-....,....-...,..tested for theQ1 PC1 bus cardBoth these projects mere sofixare des elopment efforts tonards contributing to dlfferentaspects of Roboucs and lZ1echatronics projects m the Controls and Roboucs Group..
Subject : Electericl tess
: برق
electronic file name : TL47009.pdf
Title and statement of responsibility and : MEDIDAS INTERFEROMETRICAS DEL COEFlClENTE PIEZOELECTRICOS d33 EN PELICULAS DE NITRURO DE ALUMlNlO [Thesis]
 
 
 
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